Wednesday, November 24, 2010

4 channels mixer voltage controlled

The audio mixer schematic we propose is developed arround 4 amplifiers build inside SSM2024 produced by Precision Monolithics Inc. (PMI) and is voltage controlled (VR).

The maximum VR voltage is 5.5Volt. The signal/noise ratio is 90dB and 130Khz band wide. This 4 channels mixer works great at +- 15Volt but you can use voltages between 9Volt and 18Volt.
4 channels mixer voltage controlled
Audio mixer circuit schematic

Tuesday, November 23, 2010

1.2 volts power supply

This switch mode power supply circuit require an input voltage range , between 4.5V to 16V,and will provide a very stable output voltage of 1.2 volt . The LTM4627 supports an output voltage range of 0.6V to 5V, set by a single external resistor , so you can modify the output voltage .


High switching frequency and a current mode architecture enable a very fast transient response to line and load changes without sacrificing stability.
 
1.2 volts power supply

Variable switching power supply using LM317

Another power supply electronic circuit that is designed using LM317 voltage regulator can be designed using few electronic parts . This power supply circuit is a very simple low cost switching regulator electronic project that is based on the LM317 three terminal regulator .


As you can see in the circuit diagram this power supply electronic project require few external components and a LM317HV regulator . The input voltage required by this electronic project must be between 8 and 35 volt , and will provide a variable output voltage over a wide range , from 1.8 volts up to 32 volts
The maximum output current that can be delivered by this LM317HV switching power supply electronic project is up to 3 amperes .


C1 , C4 capacitors must be a solid tantalum type and L1 coil must have a 600uH inductance . For L1 coil you can use a Arnold A-254168-2 core with 60 turns .
 
 
 
 
 
 
 
 
 
 
 
 
source:http://www.electroniq.net

UM3561 electronic siren circuit diagram

This siren alarm circuit diagram is based on a specialized IC UM3561 , which is a low power CMOS LSI specially designed for this type of applications . The UM3561 contains all needed parts ( oscillator , selector circuits , programmed mask ROM ) to simulate siren sound using few external components .


The siren circuit require a power supply circuit around 3 volts and has a low current . The UM3561 siren sound generator circuit has possibility to generate four types of sounds : police siren , fire engine siren , ambulance siren and machine gun sound .
 
The transistor used in this project must be 2SC9013 , 2SC8050 or similar type .
 

The speaker used at the output must have 8 ohms impedance and a 0.2 watts power .

As you can see in these three circuit diagrams , the configuration for the siren is very simple .
UM3561 electronic siren circuit diagram
Police siren , fire engine siren , ambulance siren and machine gun sound .






Police siren , fire engine siren , ambulance siren .

 
 
 
 
 
 
 
 
Police siren and machine gun sound .
 

source :http://www.electroniq.net

Simple mixer circuit – Common base

The simple mixer schematic is built on common base principle, where input voltages are transformed in alternative currents wich are summed to form the alternative current component for the collector. The total amplification is R6 - Ri, where Ri is one of the input resistors. I’ve build this mixer for a little transmitter and works great.

Simple mixer circuit – Common base


















Simple mixer circuit – Common base
source :http://electroschematics.com

Simple mixer circuit * Common base

Monday, November 15, 2010

IRF740 Datasheet , power MOSFET

N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

APPLICATIONS
# HIGH CURRENT SWITCHING
# UNINTERRUPTIBLE POWER SUPPLY (UPS
# DC/DC COVERTERS FOR TELECOM,
# INDUSTRIAL, AND LIGHTING EQUIPMENT

 MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1 C/W; Voltage, Vds Max:400V

  search keyword :
IRF740, IRF740 Datasheet, IRF740 MOSFET N Channel Transistor, IRF740

download datasheet 

Power MOSFET IRFP264, SiHFP264 datasheet

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES


• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


Maximum Power Dissipation = 280w
Drain-Source Voltage = 250v
Gate-Source Voltage = ± 20

ORDERING INFORMATION :

Package : TO-247

Lead (Pb)-free : IRFP264PbF , SiHFP264-E3 .

SnPb : IRFP264 , SiHFP264 .


search keyword :
IRFP264 datasheet, IRFP264 circuit, IRFP264 data shee Power MOSFET

download datasheet 

IRFP250 free Datasheet

33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits Formerly developmental type TA9295.

IRFP250 FET 200V 33A 180W
IRFP250

Features

• 33A, 200V
•rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Moun
Components to PC Boards”

search keyword :

Power MOSFET. IRFP250 , IRFP250 datasheet,IRFP250 Pinout , IRFP250 MOSFET N Channel Transistor,

download datasheet 

Wednesday, November 10, 2010

str6707

The STR-S6707, STR-S6708, and STR-S6709 are specifically designed to meet the requirement for increased integration and reliabil- ity in off-line quasi-resonant flyback converters.  These devices incorpo-
rate the primary control and proportional drive circuit with a third- generation high-voltage bipolar switching transistor.
Crucial system parameters such as maximum ON time and OFF
time are fixed during manufacture.  Local control circuit decoupling and
layout are optimized within each device.
Cycle-by-cycle current limiting, under-voltage lock-out with hyster-
esis, over-voltage protection, and thermal shutdown protect these
devices during all normal and overload conditions.  Over-voltage
protection and thermal shutdown are latched after a short delay.  A
versatile triple-level inhibit circuit includes the OFF time synchronization
required to establish quasi-resonant operation.  The inhibit function has
also been expanded to initiate operation in stand-by mode in which the
power supply delivers a small fraction of the steady-state output power.
The dual requirements of dielectric isolation and low transient thermal
impedance and steady-state thermal resistance are satisfied in an over-
molded single-in-line power package.
Proven in substantial volumes, these devices and their fixed-
frequency counterparts represent a significant advance in off-line SMPS
reliability growth and integration.


FEATURES
  Quasi-Resonant Operation for Low EMI and High Efficiency
  Output Power to 220 W
  Low-Power Output Standby Mode
  Pulse-by-Pulse Over-Current Protection
  Latched Over-Voltage and Thermal Protection
  Third-Generation Switching Transistor with Proportional Drive
  Maximum ON Time and Off Time Set During Manufacture
  Internal Under-Voltage Lockout with Hysteresis
  Over-Molded SIP with Integral Isolated Heat Spreader

 OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR
STR6707 datasheet, STR6707 datasheets, STR6707 datenblatt, STR6707

 http://www.tube-tester.com/sites/nixie/nixie-clock-cd47/data/STRS6707.pdf

Tuesday, November 9, 2010

LM49155 Uplink Noise Suppression & Downlink SNR Enhancement Analog Audio Subsystem

Features
Noise cancellation for uplink and downlink without DSP-type artifacts, distortions or delays
Adapting AGC on ambient noise level & downlink signal strength for earpiece
Downlink adjustable noise-reducing high pass filter
E 2S Class D Amplifier with ALC
Ground Referenced Headphone Outputs with Advanced Click Pop Suppression
Micro-power shutdown

Description
The LM49155 is a fully integrated audio subsystem designed for portable handheld applications such as cellular phones. The LM49155 combines a Noise Suppression microphone amplifier, a 1.35W mono class D amplifier with ALC, class AB earpiece driver with AGC, a high efficiency, stereo, ground referenced headphone amplifier with click pop suppression and I 2C modes select and volume control.
The LM49155 features analog fully differential input, and differential output microphone amplifier designed to reduce background acoustic noise, while delivering superb speech clarity in voice communication applications. Downlink SNR enhancement with an advanced acoustic AGC technology to adjust output levels.
The LM49155 speaker amplifier features National’s unique output limiter that provides both a no-clip feature and speaker protection. The E 2S class D amplifier features a patented, ultra low EMI PWM architecture that significantly reduces RF emissions while preserving audio quality and efficiency. The headphone drivers feature National’s ground referenced architecture that creates a ground-referenced output from a single, low-voltage supply.


Applications
Mobile Phones
Portable Electronic Devices

download lm49155 datasheet

Mono Class D Audio Codec Subsytem with Ground Referenced Headphone Amplifiers

Features
Ultra efficient, spread spectrum Class D loudspeaker amplifier that operates at 93% efficiency
Low voltage, true ground headphone amplifier operation
High performance 103dB SNR stereo DAC
High performance 97dB SNR stereo ADC
Up to 96kHz stereo audio playback
Up to 48kHz stereo recording
Dual bidirectional I 2S or PCM compatible audio interfaces
Read/write I 2C compatible control interface
Flexible digital mixer with sample rate conversion
Sigma-delta PLL clock network that supports system clocks up to 50MHz including 13MHz, 19.2MHz, and 26MHz
Dual stereo 5 band parametric equalizers
Cascadable DSP effects that allow stereo 10 band parametric equalization
ALC/Limiter/Compressor on both DAC and ADC paths
Dedicated Earpiece Speaker Amplifier
Stereo auxiliary inputs and mono differential input
Differential microphone input with single-ended option
Automatic level control for digital audio inputs, mono differential input, microphone input, and stereo auxiliary inputs
Flexible audio routing from input to output
16 Step volume control for microphone with 2dB steps
32 Step volume control for auxiliary inputs in 1.5dB steps
4 Step volume control for class D loudspeaker amplifier
8 Step volume control for headphone amplifier
Micro-power shutdown mode
Available in the 3.3 x 3.3 mm 36 bump micro SMD package

Description
The LM49352 is a high performance mixed signal audio subsystem. The LM49352 includes a high quality stereo DAC, a high quality stereo ADC, a stereo headphone amplifier, which supports True Ground operation, a low EMI Class D loudspeaker amplifier, and an earpiece speaker amplifier. It combines advanced audio processing, conversion, mixing, and amplification in the smallest possible footprint while extending the battery life of feature rich portable devices.
The LM49352 features dual bi-directional I 2S or PCM audio interfaces and an I 2C compatible interface for control. The stereo DAC path features an SNR of 103dB with 24-bit 48 kHz input. The headphone amplifier delivers 65mWRMS (typ) to a 32Ω single-ended stereo load with less than 1% distortion (THD+N) when HP_VDD = 2.8V. The loudspeaker amplifier delivers up to 970mW into an 8Ω load with less than 1% distortion when LS_VDD = 4.2V.
The LM49352 employs advanced techniques to extend battery life, to reduce controller overhead, to speed development time, and to eliminate click and pop artifacts. Boomer audio power amplifiers are designed specifically for mobile devices and require minimal PCB area and external components.

Applications
Smart Phones
Mobile Phones and VOIP Phones
Portable GPS Navigator and Portable Gaming Devices
Portable DVD/CD/AAC/MP3/MP4 Players
Digital Cameras/Camcorders


download datasheet from http://www.national.com/

MAX515 5V, Low-Power, Voltage-Output, Serial, 10-Bit DACs

The MAX504/MAX515 are low-power, voltage-output, 10-bit digital-to-analog converters (DACs) specified for single +5V power-supply operation. the MAX504 can also be operated with ±5V supplies. The MAX515 draws only 140µA, and the MAX504 (with internal reference) draws only 260µA. The MAX515 comes in 8-pin DIP and SO packages, while the MAX504 comes in 14-pin DIP and SO packages. Both parts have been trimmed for offset voltage, gain, and linearity, so no further adjustment is necessary.
The MAX515’s buffer is fixed at a gain of 2. The MAX504’s internal op amp may be configured for a gain of 1 or 2, as well as for unipolar or bipolar output voltages. The MAX504 can also be used as a four-quadrant multiplier without external resistors or op amps. For parallel data inputs, see the MAX503 data sheet. For a hardware and software compatible 12-bit upgrade, refer to the MAX531/MAX538/MAX539 data sheet.
Applications:
» Audio Systems
» Battery-Operated/Remote Industrial Controls
» Battery-Powered Test Instruments
» Digital Gain and Offset Control
» Machine- and Motion-Control Devices


Download free datasheet: MAX515 5V, Low-Power, Voltage-Output, Serial, 10-Bit DACs

source : http://www.freedatasheetdownload.com

Transistors

A transistor is a semiconductor device, commonly used as an amplifier or an electrically controlled switch. The transistor is the fundamental building block of the circuitry that governs the operation of computers, cellular phones, and all other modern electronics.
Because of its fast response and accuracy, the transistor may be used in a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators. Transistors may be packaged individually or as part of an integrated circuit, which may hold a billion or more transistors in a very small area.
Introduction
Modern transistors are divided into two main categories: bipolar junction transistors (BJTs) and field effect transistors (FETs). Application of current in BJTs and voltage in FETs between the input and common terminals increases the conductivity between the common and output terminals, thereby controlling current flow between them. The transistor characteristics depend on their type. See Transistor models.
The term "transistor" originally referred to the point contact type, but these only saw very limited commercial application, being replaced by the much more practical bipolar junction types in the early 1950s. Today's most widely used schematic symbol, like the term "transistor", originally referred to these long-obsolete devices.[1] For a short time in the early 1960s, some manufacturers and publishers of electronics magazines started to replace these with symbols that more accurately depicted the different construction of the bipolar transistor, but this idea was soon abandoned.
Types
- Bipolar junction transistor
- Field-effect transistor
- Heterojunction Bipolar Transistor
- Tetrode transistor
- Pentode transistor
- Spacistor
- Surface barrier transistor
- Micro alloy transistor
- Micro alloy diffused transistor
- Drift-field transistor
- Unijunction transistors
- Darlington transistors
- Insulated gate bipolar transistors (IGBTs)
Usage
- Switches
- Amplifiers
- Computers

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