2sd2498

2SD2498 - NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

• High Voltage : VCBO = 1500 V
• Low Saturation Voltage : VCE (sat) = 5 V (Max.)
• High Speed : tf = 0.4 µs (Typ.)
• Collector Metal (Fin) is Fully Covered with Mold Resin.

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2sd2499

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2sd2499
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV


• High Voltage : VCBO = 1500 V
• Low Saturation Voltage : VCE (sat) = 5 V (Max.)
• High Speed : tf = 0.3 µs (Typ.)
• Bult-in Damper Type
• Collector Metal (Fin) is Fully Covered with Mold Resin.

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2SD880

2SD880 - POWER TRANSISTORS(3A,60V,30W)

NPN EPITAXIAL PLANAR TRANSISTOR

Description
Designed for low frequency power amplifier applications.

Complement to 2SB834

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2SD1555

Silicon NPN Power Transistors 2SD1555

DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage

APPLICATIONS
·For color TV horizontal output applications

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2SD1583-Z

2SD1583-Z  SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SD1583-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.


FEATURES
• High hFE: hFE = 800 to 3200
• Low VCE(sat): VCE(sat) = 0.18 V TYP

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2SD313

  2SD313  NPN EPITAXIAL PLANAR  TRANSISTOR

DESCRIPTION
The UTC 2SD313 is designed for use in general purpose
amplifier and switching applications.



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2SA1015

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Am
Driver Stage Amplifier Applications

• High voltage and high current: VCEO = −50 V
IC = −150 mA
• Excellent hFE linearity : hFE (2) = 80 (typ.) at V
: hFE (IC = −0.1 mA)/h
• Low noise: NF = 1dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815.

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).


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